Other readings to medical devices research programs

very-low power rectifier circuit

https://patents.google.com/patent/US5999849A/en

“The present invention relates to implantable medical devices, and more particularly to a very-low power rectifier circuit that may be used within an implantable sensor or similar device to rectify low level pulsed or ac signals so that the energy contained in such signals can be converted to a dc potential which provides operating power for other circuits of the implantable device. (page 2)”

the low-power rectifier is a crucial technology to implement to help more devices clip the current and output waves to display a better images or signals when dealing with the data progress. The present invention addresses the above and other needs by providing a very low power rectifier circuit realized using complementary P-MOS and N-MOS (CMOS) FET switches. The FET switches are turned ON and OFF at just the right time by a control circuit in order to provide the desired rectifying function. The control circuit forms an integral part of the rectifier circuit and consumes very little power.

Antenna for miniature implanted medical device

https://patents.google.com/patent/US6804561B2/en

the above link displayed another intriguing medical device application with antennas. The present invention and other needs by providing a loop antenna formed on the case of an implantable microdevice has become more and more important nowadays. The improved antenna receives data transmitted from an external device, and transmits data to an external device. by describing the outfit of the design “Such a loop antenna may be formed from two cylindrical sections separated by an insulating material on the case of the microdevice, or by separating a metal cylinder into two parallel semi-cylinders separated by an insulating material,” the author offers the audience a bigger picture of the whole design structure. Advantageously, such a loop antenna is suitable for operation in the 402 MHz to 405 MHz frequency range, is a magnetic field device and therefore not susceptible to high absorption losses, and does not require space in the interior of the microdevice.